JPH0136263B2 - - Google Patents

Info

Publication number
JPH0136263B2
JPH0136263B2 JP56101595A JP10159581A JPH0136263B2 JP H0136263 B2 JPH0136263 B2 JP H0136263B2 JP 56101595 A JP56101595 A JP 56101595A JP 10159581 A JP10159581 A JP 10159581A JP H0136263 B2 JPH0136263 B2 JP H0136263B2
Authority
JP
Japan
Prior art keywords
thyristor
pilot
thyristors
base layer
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56101595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS583284A (ja
Inventor
Hiromichi Oohashi
Yoshihiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56101595A priority Critical patent/JPS583284A/ja
Publication of JPS583284A publication Critical patent/JPS583284A/ja
Publication of JPH0136263B2 publication Critical patent/JPH0136263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP56101595A 1981-06-30 1981-06-30 サイリスタ Granted JPS583284A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56101595A JPS583284A (ja) 1981-06-30 1981-06-30 サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101595A JPS583284A (ja) 1981-06-30 1981-06-30 サイリスタ

Publications (2)

Publication Number Publication Date
JPS583284A JPS583284A (ja) 1983-01-10
JPH0136263B2 true JPH0136263B2 (en]) 1989-07-31

Family

ID=14304730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101595A Granted JPS583284A (ja) 1981-06-30 1981-06-30 サイリスタ

Country Status (1)

Country Link
JP (1) JPS583284A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004040524B4 (de) * 2004-08-20 2006-06-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristor mit gleichmäßigem Zündverhalten

Also Published As

Publication number Publication date
JPS583284A (ja) 1983-01-10

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